Exposure device, exposure method and method of manufacturing semiconductor device

ABSTRACT

The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposure with the use of the back side exposure device of which a reflecting means is disposed on the front side of a substrate, apart from a photosensitive thin film surface by a distance X(X=0.1 μm to 1000 μm), and formation of a photosensitive thin film pattern in a self alignment manner, with good controllability, at a position a distance Y away from the end of a pattern. The invention fabricates a TFT using that method.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an exposure device and an exposuremethod. The invention also relates to a semiconductor device having acircuit that is composed of a thin film transistor (hereinafter referredto as TFT) made by using the exposure method, and to a method ofmanufacturing the same. The semiconductor device of the presentinvention includes not only elements such as thin film transistors(TFTs) and MOS transistors but also electrooptical devices, such asdisplay devices and image sensors, having semiconductor circuitscomposed of those insulating gate type transistors. The semiconductordevice of the invention relates to, for example, electrooptical devicestypical example of which is a liquid crystal display panel or anelectroluminescence (EL) display device and to electronic equipmentsprovided with as their parts such electrooptical devices.

Incidentally, the semiconductor device in this specification refers todevices in general which can function by utilizing semiconductorcharacteristics. The electrooptical devices, the semiconductor circuitsand the electronic equipments are therefore all fall into thesemiconductor device.

2. Description of the Related Art

What has been receiving attention is an active matrix liquid crystaldisplay device in which a pixel circuit and a driver circuit arecomposed of thin film transistors (TFT) formed over an insulatingsubstrate. Liquid crystal displays in use as a display device vary insize, ranging approximately from 0.5 inch to 20 inch.

With the intention of realizing a liquid crystal display device capableof high definition display, attention is presently drawn to a TFT ofwhich an active layer is made of a crystalline semiconductor filmrepresented by a polysilicon film.

However, the TFT having an active layer of crystalline semiconductorfilm involves a problem in that the TFT is, on one hand high inoperation speed and driving performance, but on the other hand large inleak current as compared to a TFT having an active layer of an amorphoussemiconductor film.

Known as a technique to suppress this leak current is to form an LDDregion between a channel forming region and drain region of the TFT.This LDD region serves to ease the intensity of the electric fieldformed between the channel forming region and the drain region, reduceOFF current of the TFT and prevent degradation.

In order to form the LDD region between the channel forming region anddrain region of the TFT, a mask is used to dope a region to be the drainregion with a high concentration of impurity ion for impartingconductivity and to dope a region to be the LDD region with a lowconcentration of impurity ion for imparting conductivity. Asconventional methods for forming a mask used to thus selectively formregions different in dopant concentration, Patterning <1> (non selfalignment method) and Patterning <2> (self alignment method) areenumerated. Patterning <1> uses a photo mask and Patterning <2> uses awiring as a mask to perform exposure from the back side.

The Patterning <1> using a conventional photo mask is briefly describedbelow. When an LDD structure is to be formed, a mask by photolithographyis usually employed. The description here is made using a fabricatingprocess of a bottom gate type TFT by way of example.

First, a gate wiring is formed over an insulating substrate. A firstphoto mask is used at this stage. Then, a gate insulating film and asemiconductor film having an amorphous region are formed over the gatewiring. The semiconductor film having an amorphous region is subjectedto crystallizing process through heating, laser beam irradiation or thelike to form a crystalline semiconductor film.

A mask pattern is subsequently formed with the use of the Patterning<1>. The Patterning <1> here means to perform the steps of forming aninsulating film for the mask pattern, applying a photoresist film ontothe insulating film for the mask pattern, forming a photoresist patternthrough exposure and development with the use of a second photo mask,etching the insulating film for the mask pattern to form a mask patternwhile using the photoresist pattern as a mask, and removing thephotoresist pattern. Such a method involving the use of a photo mask iscalled non self alignment method. Thereafter, the mask pattern is usedto selectively dope the crystalline semiconductor film with an impurityion for imparting conductivity, thereby forming a source region, a drainregion, an LDD region or the like.

The problem accompanying this method is that characteristics of TFTsvary because the positioning of the photo mask is uneven in a certainrange. High accuracy is required particularly in patterning the maskpattern, which determines the width of a channel forming region.

The Patterning <2> in which a wiring serves as a mask to expose from theback side is described with reference to FIGS. 14A to 14C. As comparedwith the Patterning <1>, patterning by exposure from the back side canattain higher accuracy. However, in patterning by exposure from the backside in prior art, light goes around and reaches over, resulting in aslightly narrower pattern than the width of the wiring.

First, a gate wiring 11 is formed over an insulating substrate 10. Afirst photo mask is used at this stage. Then, a gate insulating film 12and a semiconductor film having an amorphous region are formed over thegate wiring. The semiconductor film having an amorphous region issubjected to crystallizing process through heating, laser beamirradiation or the like to form a crystalline semiconductor film 13.

A mask pattern is subsequently formed with the use of the Patterning<2>. The Patterning <2> here means to perform the steps of forming aninsulating thin film 14 for the mask pattern, applying a photoresistfilm 15 onto the insulating thin film for the mask pattern (FIG. 14A),forming a resist pattern 16 through exposure from the back side with theuse of gate wiring as a mask and development (FIG. 14B), etching theinsulating film for the mask pattern to form a mask pattern 17 whileusing the resist pattern as a mask, and removing the resist pattern 16(FIG. 14C). Formed through this exposure from the back side is the maskpattern 17 which has almost the same size as the gate wiring. In FIGS.14A to 14C, the end of the resist pattern and the wiring end coincidewith each other. However in fact, light rounds to make the mask pattern17 shorter than the gate wiring, spacing apart their ends by about 0.3to 0.5 μm.

Such a method that does not use a photo mask is called self alignmentmethod. Thereafter, the mask pattern is used to selectively dope thecrystalline semiconductor film with an impurity ion for impartingconductivity, thereby forming a source region, a drain region or an LDDregion.

The problem this method <2> gives rise to is that forming the resistpattern as desired is difficult because the resist pattern can be formedonly one having almost the same size as the gate wiring used for a mask.Although it is possible to form the resist pattern within the gatewiring area by changing exposure conditions such as exposure time tomake the light round, the light reaches over to cause reduction in filmthickness of the resist pattern. For that reason, particularly when aminute wiring is used as a mask, the method is not suitable, for a fearthat the entire resist over the wiring may be exposed. If the lightrounds, it merely reaches somewhere 1 μm far from the end, at most. Inaddition, to cause the light to round and reach the point about 1 μm farfrom the end, considerable exposure time and exposure light quantity arerequired.

Consequently, it has been needed to conduct selective doping using masksby the Patterning <1> and the Patterning <2>when an LDD region is formedin a process of manufacturing a bottom gate type TFT.

SUMMARY OF THE INVENTION

The present invention has been made to solve the above problems inherentin prior art, and therefore an object of the present invention is toprovide a novel exposure device that forms a mask pattern in a selfalignment manner.

Another object of the present invention is to provide the structure of adisplay device employing a TFT and a method of manufacturing the same,the TFT being fabricated by forming a mask pattern in a self alignmentmanner through an exposure method with the use of the exposure device ofthe present invention to form an LDD region over a gate wiring.

In order to attain the objects above, the present invention ischaracterized in that an exposure device of which a reflecting plate isarranged on the front side of a substrate and apart from aphotosensitive thin film surface by a distance X(0.1 μm to 1000 μm) isused to perform exposure from the back side, thereby forming a maskpattern in a self alignment manner.

According to the structure of the present invention, to be disclosed inthis specification, an exposure device is characterized by comprising:

-   -   a stage for placing a light transmissive substrate on which a        photosensitive thin film is formed;    -   a light source for irradiating the photosensitive thin film from        the back side of the light transmissive substrate; and    -   a reflecting means disposed on the front side of the light        transmissive substrate.

In the structure above, the device is characterized in that thereflecting means is a substrate provided with a thin film made of amaterial with reflectivity.

In the structure above, the photosensitive thin film is a photoresistfilm.

In the structure above, the device is characterized in that thephotosensitive thin film is formed on a pattern made of anon-light-transmissive (light-shielding) thin film material.

In an exposure method of the present invention, light from the lightsource penetrates the substrate from its back side to be irradiated ontothe photosensitive thin film (except for a region over a gate wiring).The light from the light source which has penetrated the photosensitivethin film is reflected or scattered by the reflecting plate disposed onthe front side of the substrate, and is irradiated onto the (entire)photosensitive thin film from the front side of the substrate. A regionof the photosensitive thin film which is irradiated with only a minutequantity of this reflected or scattered light is utilized to form a maskpattern. Because of this region irradiated with only a minute quantityof the reflected or scattered light, of which position can be determinedby suitably changing the distance X(0.1 μm to 1000 μm between thephotosensitive thin film surface and the reflecting plate, a maskpattern of a desired size may be formed over the gate wiring in a selfalignment manner.

According to the structure of the present invention, an exposure methodwith the use of the above exposure device is characterized by comprisingthe steps of:

-   -   forming on a light transmissive substrate a pattern made of a        non-light-transmissive (light-shielding) thin film material;    -   forming a photosensitive thin film on the pattern; and    -   exposing the photosensitive thin film by irradiating it from the        back side of the substrate with light emitted from a light        source while using the pattern as a mask, and reflecting or        scattering by a reflecting means, which is disposed on the front        side of the substrate, the light from the light source which has        penetrated through the photosensitive thin film, so that the        photosensitive thin film is irradiated from the front side of        the substrate with the light and is exposed.

In the structure above, the exposure method is characterized in that theshape of the photosensitive thin film formed over the patterncorresponds to a reduced shape of the pattern made of thenon-light-transmissive (light-shielding) thin film material.

The mask pattern formed through the exposure method of the presentinvention, or a doping mask made of an insulating film formed with theuse of the mask pattern as a mask, is used to selectively add animpurity ion for imparting conductivity, thereby forming an LDD region.

Incidentally in this specification, one substrate side on which the TFTis fabricated is regarded as the front side, and its side opposite tothe front side is regarded as the back side.

A substrate regarded as a light transmissive substrate in thisspecification is one having a transmittance of 60% or more, preferably80% or more with respect to light from the light source of the exposuredevice.

A material that may be used as the reflecting means is a substrate(reflecting plate) with a highly reflective metal film, such as analuminum film or a silver film, having a reflectance of 80% or more withrespect to the wavelength of light from the light source of the exposuredevice.

The “dopant” designates in this specification an element that belongs tothe group XIII or XV, unless particularly notified. Regardless of thefact that each doped region changes its size (area) during themanufacturing process, the impurity regions are denoted by the samereference symbols in this specification as long as the concentration isnot changed following the change in the area.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1E are views showing an example of a manufacturing processof the present invention (Embodiment 1);

FIGS. 2A to 2D are views showing an example of the manufacturing processof the present invention (Embodiment 1);

FIGS. 3A to 3C are views showing an example of the manufacturing processof the present invention (Embodiment 1);

FIG. 4 is a sectional view showing an example of the structure of thepresent invention (Embodiment 1);

FIGS. 5A and 5B are top views showing an example of the structure of thepresent invention (Embodiment 1);

FIG. 6 shows an exposure device of the present invention;

FIGS. 7A to 7C are views showing an example of a manufacturing processof the present invention (Embodiment 5);

FIGS. 8A to 8C are views showing an example of the manufacturing processof the present invention (Embodiment 5);

FIGS. 9A and 9B are views showing an example of the manufacturingprocess of the present invention (Embodiment 5);

FIG. 10 is a view showing a sectional structure of a liquid crystaldisplay device (Embodiment 6);

FIG. 11 shows an active matrix type display device (Embodiment 7);

FIGS. 12A to 12F are views showing examples of an electronic equipment(Embodiment 9);

FIGS. 13A to 13D are views showing examples of the electronic equipment(Embodiment 10);

FIGS. 14A to 14C are views showing an example of a conventionalmanufacturing process;

FIGS. 15A to 15B are views showing a structure of an active matrix typeEL display panel (Embodiment 11);

FIGS. 16A to 16B are views showing a structure of an active matrix typeEL display panel (Embodiment 12);

FIG. 17 is a view showing a cross section of a pixel portion in the anactive matrix type EL display panel (Embodiment 13);

FIGS. 18A to 18B are views showing a structure of the pixel portion inan active matrix type EL display panel and a circuit structure for thepixel portion, respectively (Embodiment 13);

FIG. 19 is a view showing a structure of a pixel portion in an activematrix type EL display panel (Embodiment 14); and

FIGS. 20A to 20C are views showing circuit structures for pixel portionsin active matrix type EL display panels (Embodiment 15).

DESCRIPTION OF THE PREFERRED EMBODIMENT

(Embodiment Mode 1)

Hereinbelow, a description will be made on an example of an embodimentmode of the present invention with reference to FIG. 6.

As shown in FIG. 6, an exposure device of the present inventioncomprises: a stage for placing a light transmissive substrate on which aphotosensitive thin film is formed; a light source for exposing thephotosensitive thin film to light; and a reflecting means disposed onthe front side of the light transmissive substrate. A substrate on whicha metal thin film with reflectivity is formed (reflecting plate), amirror or a light scattering plate is used as a reflecting means 602,and arranged in parallel to the substrate surface. A distance X betweenthe reflecting means and the photosensitive thin film surface isadjusted within a range of from 0.1 μm to 1000 μm, thereby controlling adistance Y for light to round.

In an exposure method of the present invention, light 601 from the lightsource which has penetrated the photosensitive thin film is reflected orscattered by the reflecting means 602 disposed on the front side of thesubstrate, so that the photosensitive thin film is selectively exposedfrom the front side of the substrate. This causes the light to round andreach onto a pattern 600 made of a non-light-transmissive(light-shielding) material, forming a mask with good controllability.

A brief description will be given on the exposure method of the presentinvention.

Explained here is a case in which, of a photosensitive thin film formedabove the pattern 600 made of a non-light-transmissive (light-shielding)material, regions excluding a region denoted by 606 (having a patternapart from the end of the pattern 600 by the distance Y) are exposed.

First, the photosensitive thin film is exposed from the back side withthe light 601 from the light source using the pattern 600 as a mask, anda region denoted by 605 a is exposed. The light which has penetrated theregion denoted by 605 a is then reflected or scattered by the reflectingmeans 602 to become light 603. The photosensitive thin film is againexposed with this reflected or scattered light 603 to expose regionsdenoted by 605 a and 605 b. Accordingly, the region denoted by 605 a isexposed twice. When only the region denoted by 605 a is intended to beexposed, exposure may thus completed in a short period of time andthroughput may be improved.

Thereafter, the exposed regions 605 a and 605 b are removed, with anunexposed region denoted by 606 left alone. Thus formed is the mask 606(having a pattern apart from the end of the pattern 600 by the distanceY).

The use as a mask of the region formed through the above steps anddenoted by 606 allows to selectively etch the thin film 604. Theutilization of this region 606 as a mask also makes possible the throughdoping of a semiconductor film 607. Incidentally, reference symbol 608in FIG. 6 denotes an insulating film.

The exposure method of the present invention may be applied to the casewhere the mask is formed over the pattern 600 made of anon-light-transmissive (light-shielding) material, without particularlimitation. The pattern 600 functions right if it is made of a materialfilm having a film thickness enough to exhibit light shielding property.

(Embodiment Mode 2)

A detailed description will be made below on an example of an embodimentmode according to the present invention, with reference to FIGS. 1A to1E. For the purpose of simplification, a manufacturing method using ann-channel TFT will be explained.

A substrate is first prepared. Usable substrate as a substrate 100includes an insulating substrate such as a glass substrate, a quartzsubstrate or a crystalline glass substrate, and a substrate having lighttransmittance such as a plastic substrate (polyethylene terephtalatesubstrate).

Next, a base insulating film (hereinafter, referred to as base film) 101is formed on the substrate and thermally processed. This base film 101may be a silicon oxide film, a silicon nitride film or a silicon nitrideoxide film (SiOxNy), or may be a laminate film of those. The filmthickness of the base film ranges from 100 nm to 500 nm. As formationmethod of the base film, thermal CVD, plasma CVD, sputtering,evaporation, low thermal pressure CVD, or the like may be used. Thisbase film has an effect of preventing diffusion of a dopant from thesubstrate. Incidentally, this base film intended to improve electriccharacteristic of the TFT is not necessarily formed.

A conductive film made of a non-transmissive conductive material (amaterial layer for gate wiring formation) is then formed on theinsulating film 101 to form a gate wiring 102 by a known patterningmethod.

A conductive material or a semiconductor material is used for thatconductive film. Examples of these materials include a single metallayer consisting of a layer that contains as a main ingredient tantalum(Ta), tantalum nitride (TaN), aluminum (Al), copper (Cu), niobium (Nb),hafnium (Hf), zirconium (Zr), titanium (Ti), chromium (Cr), tungsten(W), molybdenum (Mo) or silicon (Si), and a laminate structure in whichthose are combined. As a representative example of the laminatestructure, Ta/Al, Ti/Al, Cu/W, Al/W, W/Mo and so on may be enumerated.Also may be used the structure provided with metal silicide(specifically, the structure in which metal silicide is combined withsilicon having conductivity such as Six, Si/TiSix, Si/CoSix orSi/MoSix). The film thickness of the conductive film ranges from 10 nmto 500 nm.

Subsequently, an insulating film 103 for protecting the surface of thegate wiring is formed. The film 103 is preferably an anodic oxidationfilm formed through anodic oxidation of the gate wiring, or is a thinsilicon nitride film covering the entire surface of the gate wiring.

A gate insulating film 104′ is next formed. Usable films for the gateinsulating film 104′ include a silicon oxide film, a silicon nitridefilm, a silicon nitride oxide film (SiOxNy), an organic resin film (BCB(benzocyclobutene), etc.), and a laminate film of those. The gateinsulating film is formed through a known method such as thermal CVD,plasma CVD, low thermal pressure CVD, sputtering, evaporation orcoating, in a film thickness range of from 10 nm to 400 nm.

Next, a semiconductor film is formed on the gate insulating film 104′.An example of the semiconductor film includes an amorphous silicon film,an amorphous semiconductor film containing microcrystal, a microcrystalsemiconductor film, an amorphous germanium film and an amorphous silicongermanium film expressed as Si_(x)Ge_(1-x)(0<X<1), and a laminate filmof those. The film thickness thereof varies from 20 nm to 70 nm(typically, 40 to 50 nm). The semiconductor film is formed throughthermal CVD, plasma CVD, low thermal pressure CVD, sputtering or thelike.

Then a crystallization processing is performed on the semiconductor filmhaving an amorphous region to form a crystalline semiconductor film 105(FIG. 1A).

The crystallization processing according to the present invention mayemploy any known methods, for example, crystallization processing byinfrared rays or ultraviolet rays irradiation (hereinafter referred toas laser crystallization), laser crystallization using a catalyticelement, thermal crystallization, and thermal crystallization using acatalytic element. Also, the crystallization processing may be used incombination.

The laser crystallization is in particular effective, for it impartsless stress on the substrate and takes a short period of time toprocess. When ultraviolet rays are used for crystallization processing,excimer laser light or intense light emitted from an ultraviolet lampmay be employed, and when infrared rays are used, an infrared laser beamor intense light emitted from an infrared lamp will do. Incidentally, itis possible to irradiate laser beam shaped into a linear (several mmwidth×several tens cm length), rectangular or square beam by a pulselaser using XeCl, ArF, KrF, etc. as gas for laser, a continuous wavelaser such as an Ar laser, or YAG laser (second, third, fourth etc.harmonics).

Conditions on the laser crystallization (the shape of the laser beam,laser beam wavelength, overlap ratio, irradiation intensity, pulsewidth, repetition frequency, irradiation time, etc.) may be suitablydetermined while taking into consideration the film thickness of thesemiconductor film, substrate temperature or the like. Depending on thelaser crystallization condition, there are some cases in which thesemiconductor film is crystallized after it passes its melted state, andin which the semiconductor film is crystallized while it is in a solidphase state without melting or in a middle state between solid phase andliquid phase. Moreover, it is also possible to complete formation of thesemiconductor film, formation of the insulating film and lasercrystallization of the semiconductor film within the same chamber,avoiding exposure to the air.

The thermal crystallization including addition of a catalytic element(nickel) for promoting crystallization is described in detail in, forexample, Japanese Patent Application Laid-open Nos. Hei 7-130652, whichcorresponds to U.S. Pat. No. 5,643,826 and Hei 9-312260 whichcorresponds to a pending U.S. application Ser. No. 08/785,489. An entiredisclosure of JP 7-130652, 9-312260, and U.S. application Ser. No.08/785,489 and U.S. Pat. No. 5,643,826 is incorporated herein byreference. Used as a metal element for promoting crystallization is oneor plural kinds of element selected from a group consisting of Fe, Co,Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au. Ge and Pb which are substitutiontype in diffusing through an amorphous silicon film may also be used.

Note that, in the laser crystallization using a catalytic element or thethermal crystallization using a catalytic element, after the catalyticelement is added onto the base film, the semiconductor film is formedand thereafter the semiconductor film is crystallized. Whencrystallization is performed with the use of a catalytic element, a highconcentration of catalytic element is remained in the semiconductorfilm. It is therefore preferable to perform after crystallizationprocessing a step of reducing the concentration of the catalytic elementin the semiconductor film, such as gettering processing.

Then, a mask pattern will then be formed using a patterning method ofthe present invention shown below.

An insulating thin film 106 is first formed on a semiconductor film 105.Usable films for the insulating thin film 106 include a silicon oxidefilm, a silicon nitride film, a silicon nitride oxide film (SiOxNy), anorganic resin film (BCB (benzocyclobutene), etc.), and a laminate filmof those. The insulating thin film 106 is formed through a known methodsuch as thermal CVD, plasma CVD, low thermal pressure CVD, sputtering,or evaporation, in a film thickness range of from 10 nm to 200 nm. Thisinsulating thin film 106 is to enhance adherence to a photosensitivethin film that will be laminate in a following step and, at the sametime, to protect the semiconductor film, especially, a region to be achannel forming region against contamination.

A photosensitive thin film 107 is next formed over the insulating thinfilm (FIG. 1B). The photosensitive thin film 107 may be made of positivephotoresist, negative photoresist, photosensitive polyimide or the like.A known method such as coating is applied to a formation method of thephotosensitive thin film 107. The film thickness of the photosensitivethin film is, though not particularly limited as thin as the film allowsultraviolet rays to transmit, in a range of from 0.25 μm to 4 μm,preferably from 1 μm to 2 μm.

Exposure is then carried out using a device for exposure from the backside in which a reflecting plate 108 is disposed in parallel with thesubstrate surface (distanced by a distance X₁ from the photosensitivethin film surface (X₁=0.1 to 1000 μm)). The exposure method of thepresent invention is characterized in that light from the light sourcewhich has penetrated the photosensitive thin film is reflected orscattered by the reflecting plate 108 disposed on the front side of thesubstrate to ununiformly irradiate the entire surface of thephotosensitive thin film. The light from the light source penetrates thesubstrate from the back side to irradiate the photosensitive thin film(excluding a region over the gate wiring).

Namely, a region irradiated with only a minute quantity of lightreflected or scattered by the reflecting plate 108 is used to obtain afirst photosensitive thin film pattern 109 having a smaller size thanthe size of the gate wiring (FIG. 1C). The reduction ratio of thephotosensitive thin film pattern 109 as compared with the size of thegate wiring 102 may be suitably adjusted by changing the distance X₁(distance between the photosensitive thin film surface and thereflecting plate), exposure quantity, exposure time, etc. This firstphotosensitive thin film pattern 109 is used as an etching mask toselectively etch the insulating thin film 106, thereby forming aninsulating thin film pattern 110 over a region to be the channel formingregion (FIG. 1D). After that, the first photosensitive thin film pattern109 is removed (FIG. 1E).

Through the steps above, a pattern can be formed in a self alignmentmanner over the gate wiring.

Another photosensitive thin film is then formed with the use of a selfalignment method similar to the above described exposure from the backside, and exposure from the back side is conducted one more. Throughthis second exposure from the back side, a second photosensitive thinfilm pattern is formed so that the size thereof is smaller than the sizeof the gate wiring pattern and larger than the first photosensitive thinfilm pattern 109 by adjusting a distance X₂, exposure quantity, exposuretime, etc.

A high concentration of dopant for imparting p-type or n-typeconductivity is then added using the second photosensitive thin filmpattern and the insulating thin film pattern as masks. In this way, aregion selectively doped with the dopant for imparting conductivitybecomes a source region or a drain region.

After removing the second photosensitive thin film pattern, a lowconcentration of dopant for imparting p-type or n-type conductivity isthen added using the insulating thin film pattern as a mask. A lightlydoped region (LDD region) is thus formed between the heavily dopedregion (source region/drain region) and the channel forming region.

Accordingly, the size of the channel forming region is determined by thefirst photosensitive thin film pattern, and the size of the LDD regionis determined by the second photosensitive thin film pattern. Thephotosensitive thin film patterns formed by the patterning method of thepresent invention are formed only over the gate wiring, overlapping theLDD region with a gate electrode (which is the structure so-called theGOLD structure). Degradation of ON current in the TFT is thus suppressedto improve reliability. For example, width of the LDD region can be setto 1.0 to 4.0 μm.

An offset region may be formed instead of the LDD region. Further, it isalso possible to repeat a plurality of times the patterning inaccordance with the patterning method of the present invention to formthe LDD region and the offset region. In addition, it is also possibleto form, other than the channel forming region, at least three kinds ormore of doped regions containing the same dopant in differentconcentrations by repeating appropriate number of times both thepatterning according to the patterning method of the present inventionand doping with dopants.

The patterning of the present invention may be used in combination witha known patterning method using a photo mask and a known patterningmethod involving exposure from the back side.

Though shown here is an example of forming the LDD region of the bottomgate type TFT, the invention may be applied to the top gate structure(representatively, the planer structure) without any particularlimitation, if the mask is patterned over the pattern made of anon-transmissive material. For instance, the invention may also beapplied to patterning of an insulating film having over its lower layera pattern made of a non-transmissive material, and to a patterning of anactive layer.

The use of the device according to the present invention allows toperform exposure from the back side even with a minute wiring.

The present invention comprised of the structures above will bedescribed in further detail with embodiments shown below.

Hereinafter, embodiments of the present invention are described but,needless to say, are not intended to limit the invention thereto.

[Embodiment 1]

This embodiment takes an example of fabricating a CMOS circuit, whichconstitutes a part of a peripheral driver circuit, and a pixel TFT,which constitutes a part of a pixel portion, over the same substrate,using the present invention. Explanation is briefly given below withreference to FIGS. 1A to 5B, which are simplified sectional viewsshowing a semiconductor device of the present invention and a method ofmanufacturing the same. For the purpose of simplification, an n-channelTFT is used for the detailed description on the manufacturing method inthis embodiment.

First, a light transmissive substrate 100 is prepared. A glass substrate(Corning 1737; with a strain point of 667° C.) is used as the substrate100 in this embodiment. A base insulating film (hereinafter in thisspecification, referred to as base film) is formed on the substrate 100and then thermally processed. The thermal processing here is performedat a temperature below the strain point of the substrate, preferably at200 to 700° C. In this embodiment, the base film 101 is formed suchthat, using TEOS and oxygen (O₂) for row material gas, a silicon oxidefilm with a thickness of 200 nm is formed by a plasma CVD apparatus andthen is thermally processed at 640° C. for 4 hours.

Next, a conductive film is formed on the base film 101 and is patternedto form a gate wiring. Though not shown in this embodiment forsimplification, a gate wiring 102 is formed by forming a laminate filmconsisting of a tantalum nitride film with a thickness of 50 nm and atantalum film with a thickness of 250 nm, and then conducting a normalpatterning using a photo mask. In this embodiment, the gate wiring issubjected to anodic oxidation treatment to form a protective film 103 ofthe gate wiring. Providing this protective film uniforms crystal grainsize formed at a later step of crystallizing the semiconductor film.

Then, a gate insulating film 104′ is formed to cover the gate wiring 102and its protective film 103. The gate insulating film 104′ in thisembodiment is a silicon oxide film having a thickness of 125 nm andformed by plasma CVD.

Subsequently, a semiconductor film is formed over the gate insulatingfilm 104′. In this embodiment, the semiconductor film is an amorphoussilicon film having a thickness of 55 nm and formed by plasma CVD.

The semiconductor film, that is, an amorphous silicon film is thencrystallized. The film is irradiated in this embodiment with excimerlaser beam to form a crystalline silicon (semiconductor) film 105 (FIG.1A).

An insulating thin film 106 is next formed on the crystallizedsemiconductor film 105. In this embodiment, the insulating thin film 106is a silicon oxide film having a thickness of 200 nm and formed byplasma CVD. Though used in this embodiment is a silicon oxide film, anyinsulating film may be used without particular limitation.

Next on the insulating thin film 106, a first photosensitive thin film107 is formed. As formation method of the first photosensitive thin filmin this embodiment, coating is used and a positive photoresist film (aproduct of Tokyo Ohka Kogyo, TSMR 8900, 45cP) is formed in a filmthickness of 2.3 μm (FIG. 1B).

Then using a back side exposure device in which a reflecting plate 108(apart from the first photosensitive thin film surface by a distance X₁)disposed in parallel with the substrate surface, a first back sideexposure is performed in a self alignment manner (here, exposure lightquantity is 10 mW) (FIG. 1C). In this embodiment, the Kapton Tape with athickness of 1.0 μm is interposed between the reflecting plate 108 andthe substrate so that the distance X₁ between the first photosensitivethin film surface and the reflecting plate 108 shown in FIG. 1C is 1.0μm. Ultraviolet rays from the light source penetrate through thesubstrate from the back side to expose the first photosensitive thinfilm (excluding the region on the gate wiring), and the light isreflected or scattered by the reflecting plate disposed on the frontside of the substrate to expose the entire surface of the firstphotosensitive thin film from the front side of the substrate. The filmis thereafter developed to selectively remove the photosensitive thinfilm exposed to the ultraviolet rays, leaving a first photoresistpattern 109 that is smaller in size than the gate wiring pattern.

Subsequently, the insulating thin film 106 is selectively removed usingthe first photoresist pattern 109 as an etching mask, to form aninsulating thin film pattern 110 (FIG. 1D).

The first photoresist pattern 109 is then removed (FIG. 1E).

A second photosensitive thin film 111 is next formed, and a secondexposure from the back side is conducted using the method of selfalignment manner as in the first exposure from the back side. In thisembodiment, the same material that forms the first photosensitive thinfilm is used for the second photosensitive thin film 111, and thedistance X₂ between the second photosensitive thin film surface and thereflecting plate is adjusted to 0.5 μm to perform the second exposurefrom the back side (exposure light quantity here is 10 mW) (FIG. 2B).This second exposure from the back side leaves a second photoresistpattern 112 smaller in size than the gate wiring pattern and larger thanthe first photoresist pattern 109.

Next, a high concentration of dopant for imparting n-type conductivityis added using the second photoresist pattern 112 and the insulatingthin film pattern 110 as masks. In this way, a region 113 selectivelydoped with a high concentration of dopant for imparting conductivitybecomes a source region or a drain region (FIG. 2C).

After that, the second photoresist pattern 112 is removed (FIG. 2D) toform a thin silicon oxide film 114′ (50 nm) (FIG. 3A). This siliconoxide film 114′ is a film to add a low concentration of dopant with goodcontrollability, and is not necessarily formed. Though a silicon oxidefilm is used in this embodiment, other insulating material film such asa silicon nitride film and a silicon oxide nitride film may be used.

Subsequently, a dopant for imparting n-type conductivity is addedthrough the thin silicon oxide film 114′ to form regions 116, 117selectively doped with a low concentration of dopant. The insulatingthin film pattern 110 serves as a mask for protecting the channelforming region. In this way, the lightly doped regions (LDD regions)116, 117 are formed between heavily doped regions (source region/drainregion) 118′, 119′ and a channel forming region 115. In this embodiment,the size of the channel forming region is determined by the first resistpattern 109, and the second resist pattern 112 determines the size ofthe LDD region.

In this embodiment, phosphorus elements are used as the dopant forimparting n-type conductivity. Doping conditions, dose and accelerationvoltage are adjusted so that the phosphorus concentration when analyzedby SIMS is 1×10¹⁵ to 1×10¹⁷ atoms/cm³ in the lightly doped regionsdenoted by 116, 117 and 1×10²⁰ to 8×10²¹ atoms/cm³ in the heavily dopedregions denoted by 118′, 119′ (FIG. 3B).

Thermal annealing or laser annealing is thereafter carried out toactivate the dopant for imparting n-type conductivity. In thisembodiment, the activation is made by laser annealing. A normalpatterning including the use of a photo mask is then performed obtaininga desired shape, to thereby form a thin silicon oxide film 114,semiconductor films 115 to 119 and a gate insulating film 104. Aninterlayer insulating film 120 is next deposited, and after forming acontact hole for exposing the source region and the drain region, ametal film is formed and patterned to form metal wirings 121, 122 thatare in contact with a source region 118 and a drain region 119. Themanufacturing process of the n-channel TFT is thus completed (FIG. 3C).

Shown in this embodiment is a method of manufacturing the n-channel TFT.When the p-channel TFT is to be fabricated, boron ions for impartingp-type is added in the above doping step, instead of impurity ions forimparting n-type. The present invention may be applied to a CMOS circuitthat is composed of complementally combined n-channel TFT and p-channelTFT, or to a pixel TFT comprised of the n-channel TFT.

A description is given on an example of the structure of a semiconductordevice provided with a semiconductor circuit comprising a semiconductorelement (TFT) which is made by utilizing the above method of thisembodiment, with reference to FIG. 4 and FIGS. 5A and 5B. Thesemiconductor device according to the present invention is provided witha peripheral driver circuit portion and a pixel portion which are overthe same substrate. For the purpose of simplifying illustration, thedrawings related to this embodiment show that the CMOS circuit, which isa part of the peripheral driver circuit portion, and the pixel TFT(n-channel TFT), which is a part of the pixel portion, are formed overthe same substrate.

FIGS. 5A and 5B are views corresponding to the top view of FIG. 4. Theportion cut along the dotted line A-A′ in FIGS. 5A and 5B corresponds tothe sectional structure of the pixel circuit in FIG. 4, and the portioncut along the dotted line B-B′ in FIGS. 5A and 5B corresponds to thesectional structure of the CMOS circuit in FIG. 4. Reference symbolsused in FIG. 4 and FIGS. 5A and 5B are the same as in FIGS. 1A to 3C.

In FIG. 4, each TFT (thin film transistor) is formed over the base film101 disposed on the substrate 100. In the N-channel TFT of the CMOScircuit, the gate wiring 102 is formed on the base film and the gateinsulating film 104 is formed thereon. Formed on the gate insulatingfilm as an active layer are heavily doped regions (p+regions) 118, 119(a source region or a drain region) serving, a channel forming region415, lightly doped regions (p-regions) 416, 417 placed between theheavily doped regions and the channel forming region. The active layeris protected by the protective film 114 made of a silicon oxide film. Acontact hole is formed in the first interlayer insulating film 120covering the protective film 114, the wirings 121, 123 are connected tothe heavily doped regions 418, 419, the second interlayer insulatingfilm 126 is further formed thereon, a leading wiring 127 is connected tothe wiring 123, and the third interlayer insulating film 130 is formedto cover thereon.

On the other hand, the p-channel TFT has as an active layer the heavilydoped regions (n+regions) 118, 119 (a source region or a drain region),the channel forming region 115 and the lightly doped regions (n-regions)116, 117 formed between the heavily doped regions and the channelforming region. The wirings 121, 122 are formed in the heavily dopedregions 118, 119, and a leading wiring 128 is further connected to thewiring 122. Except for the active layer, the n-channel TFT hassubstantially the same structure as that of the p-channel TFT describedabove.

The n-channel TFT formed in the pixel circuit has the same structure asthe n-channel TFT of the CMOS circuit up through the formation of thefirst interlayer insulating film 120. Wirings 124,125 are connected withthe heavily doped regions 118, 119, the second interlayer insulatingfilm 126 and a black mask 129 are formed thereon, further formed thereonis the third interlayer insulating film 130, and a pixel electrode 131made of a transparent conductive film such as ITO or SnO₂ is connectedthereto. This electrode 131 and the black mask form an auxiliarycapacitance.

Although a transmission type LCD is manufactured as an example in thisembodiment, the invention is not particularly limited thereto. Forinstance, a reflection type LCD may be fabricated when a metal materialhaving reflectivity is used for a material of the pixel electrode, andpatterning of the pixel electrode is changed or several steps areappropriately added or deleted.

In this embodiment, the gate wiring of the pixel TFT in the pixelcircuit takes the double gate structure. Alternatively, the gate wiringmay take the multi gate structure such as the triple gate structure inorder to reduce the fluctuation in OFF current. Also it may take thesingle gate structure to improve opening ratio.

[Embodiment 2]

Embodiment 1 shows an example in which the back side exposure methodusing the reflecting plate is carried out twice, the size of the channelforming region is determined by the first resist pattern 109, and thesecond resist pattern 112 determines the size of the LDD region. In thisembodiment, an example is shown where the first resist pattern 109formed through the back side exposure method using the reflecting platedetermines the size of the channel forming region, and the size of theLDD region is determined by a pattern formed through a known exposuremethod. Steps in this embodiment are the same as ones in Embodiment 1 upthrough the step of FIG. 2A, and hence explanation of those steps isomitted.

In this embodiment, after the state shown in FIG. 2A is obtained byfollowing Embodiment 1, a known back side exposure is conducted to forma pattern made of the second photosensitive thin film which has the sameshape as the gate wiring. This pattern made of the second photosensitivethin film determines the size of the LDD region. Subsequent steps followEmbodiment 1, completing the semiconductor device. The known back sideexposure also being of self alignment manner, contributes to reduce thenumber of the photo masks used as in Embodiment 1.

In this embodiment, the first resist pattern 109 is formed through theback side exposure method using the reflecting plate, which is thepresent invention. Alternatively, the pattern made of the firstphotosensitive thin film may be formed through a known exposure methodwhile the pattern made of the second photosensitive thin film is formedthrough the back side exposure method of the present invention. Thisembodiment is easy to combine with a known exposure method and how tocombine them is not restricted.

[Embodiment 3]

This embodiment explains an example where a photosensitive thin filmdifferent from one in Embodiment 1 is used in FIG. 1B. Steps of thisembodiment is the same as those in Embodiment 1 up through the step ofFIG. 1A, and hence explanation of those steps is omitted.

Used in this embodiment is a positive resist material (a product ofTokyo Ohka Kogyo, THMR3300 LD) with higher resolution as compared withthe photoresist material (a product of Tokyo Ohka Kogyo, TSMR8900) inEmbodiment 1. This makes possible the very accurate exposure to form apattern made of a photosensitive thin film. To enhance the accuracy ofthis pattern made of a photosensitive thin film allows to form preciselythe shape of the channel forming region, thereby reducing thefluctuation in electric characteristics between TFTs.

Subsequent steps follow the steps in Embodiment 1 to complete thesemiconductor device shown in FIG. 4.

This embodiment is easy to combine with Embodiments 1, 2, and how tocombine them is not restricted.

[Embodiment 4]

In Embodiment 1, two kinds of doped regions, other than the channelforming region, which contain the same dopant with a differentconcentration are formed. Described in this embodiment is an examplewhere at least three or more kinds of doped regions that contain thesame dopant with a different concentration are formed other than thechannel forming region. Steps in this embodiment are the same as ones inEmbodiment 1 up through the step of FIG. 3B, and hence explanation ofthose steps is omitted.

In this embodiment, after the state shown in FIG. 3B is obtained byfollowing Embodiment 1, a pattern made of a third photosensitive thinfilm is further formed through the back side exposure method of thepresent invention or a known method, doping is conducted to form, otherthan the channel forming region, at least three kinds of doped regionswhich contain the same dopant in a different concentration. However, thepattern made of the third photosensitive thin film has a shape largerthan the first resist pattern and smaller than the second resistpattern. Subsequent steps follow Embodiment 1, completing thesemiconductor device.

Incidentally, it is desirable to provide multi stages in dopantconcentration so that the concentration becomes higher toward the sourceregion (or drain region) from the channel forming region. This stepwiseconcentration shift magnifies the effect of easing the electric field,thereby increasing the hot carrier resistance. The semiconductor devicemanufactured by utilizing this embodiment has the TFT of excellentreliability, greatly improving the reliability of the semiconductordevice as a whole.

This embodiment is easy to combine with Embodiments 1 to 3, and how tocombine them is not restricted.

[Embodiment 5]

This embodiment shows below an example in which a first mask for forminga channel protecting film is patterned with the use of the back sideexposure method of the present invention, and a second mask used uponformation of a source region and a drain region is formed by a normalexposure method (including the use of a photo mask).

In a bottom gate TFT in particular, degradation of ON current value(drain current flowing at the time of ON operation of a TFT) caused byhot carriers may be prevented when the boundary between an LDD regionand a channel forming region is located at a position above a gatewiring, and at the same time, apart from the end of the gate wiring by acertain distance (for instance, a position about 1 μm away when the TFTsize is L/W=8/8). Therefore, to form the first mask by the use of theback side exposure device of the present invention is appropriate.

The leak current of the TFT can be reduced when the boundary between theLDD region and the source region (or, drain region) is located on aregion except for the region above the gate wiring and at a positionapart from the end of the gate wiring by a certain distance (forinstance, a position about 1 μm away when the TFT size is L/W=8/8).Therefore, to form the second mask by a known method of exposure fromthe back side using the photo mask is appropriate.

This embodiment is described with reference to FIGS. 7A to 10. Here,detailed description will be given, following down the steps, on amethod of manufacturing simultaneously a pixel TFT of a display regionand a TFT of a driver circuit that is arranged in the periphery of thedisplay region.

In FIG. 7A, a substrate 701 may be made of a low alkaline substrate or aquartz substrate. An insulating film (not shown) such as a silicon oxidefilm, a silicon nitride film or a silicon nitride oxide film may beformed on one surface of this substrate 701 where the TFT is to beformed. Gate electrodes 702 to 704 and a capacitance wiring 705 are madefrom an element selected from a group consisting of tantalum (Ta),titanium (Ti), tungsten (W), molybdenum (Mo) chromium (Cr) and aluminum(Al), or made from a material containing those as a main ingredient.After forming a coat film by a known film formation method such assputtering or vacuum evaporation, the film is subjected to etchingtreatment so that the end face has a tapered shape, and is formed into apattern. In this embodiment, a tantalum nitride (TaN) film with athickness of 50 nm and a Ta film with a thickness of 250 nm are formedby sputtering and layered, a resist mask is formed into a predeterminedshape, and thereafter, the laminate films are subjected to a plasmaetching treatment using mixture gas of CF₄ and O₂ to be processed into adesired shape. For the purpose of simplification, that the gateelectrode has two layers are not illustrated in the drawing here. Thegate electrode may have a two layer structure of, for example, tungstennitride (WN) and tungsten (W). Though not shown here, the gate wiringconnecting to the gate electrode is simultaneously formed.

A gate insulating film 706 is made of a material containing siliconoxide and silicon nitride with a thickness of 10 to 200 nm, preferably50 to 150 nm. The gate insulating film may be formed by, for example,layering a silicon nitride film 706 a containing row materials of SiH₄,NH₃ and N₂ and having a thickness of 50 nm and a silicon nitride oxidefilm 706 b containing row materials of SiH₄ and N₂O and having athickness of 75 nm, which are formed by plasma CVD. Of course, to makethe gate insulating film a single layer of a silicon nitride film or asilicon oxide film causes no trouble. The plasma hydrogen treatmentprior to the film formation of the gate insulating film is appropriatemethod to obtain a clean surface.

Next, a crystalline semiconductor film to be an active layer of the TFTis formed. Silicon is used for a material of the crystallinesemiconductor film. First, an amorphous silicon film with a thickness of20 to 150 nm is formed by a known film formation method such as plasmaCVD or sputtering, so that the film comes into close contact with thegate insulating film 706. Though conditions on formation of theamorphous silicon film are not limited, it is desirable to reduce downto 5×10¹⁸ cm⁻³ or less an impurity element such as oxygen or nitrogencontained in the film. The gate insulating film and the amorphoussilicon film may be formed through the same method, making it possibleto sequentially form the both films. There is no exposure to theatmosphere, not even once, after the formation of the gate insulatingfilm. The surface thus can be prevented from contamination, andfluctuation in characteristics of the TFTs to be fabricated andvariation in threshold voltage can be reduced. Then using a knowncrystallization technique, a crystalline silicon film 707 is formed. Thecrystalline silicon film 707 may be formed by, for example, laserannealing, thermal annealing (solid phase growth method), or thecrystallization method with the use of catalytic element following thetechnology disclosed in Japanese Patent Application Laid-open No. Hei7-130652.

A region in the crystalline silicon film 707, where an n-channel TFT isto be formed, may be doped with boron (B) at a concentration of about1×10¹⁶ to 5×10¹⁷ atoms/cm³, with the intention of controlling thresholdvoltage. Boron may be added through ion doping, or may be added at thesame time as the amorphous silicon film is formed. (FIG. 7A).

Next, in order to form a lightly doped region to be the LDD region ofthe n-channel TFT, a mask for adding an impurity element for impartingn-type is formed. Firstly, a mask insulating film 708 is formed on thesurface of the crystalline silicon film 707 using a silicon oxide filmor a silicon nitride film with a thickness of 100 to 200 nm, typically120 nm. After forming a photoresist film on the entire surface of thismask insulating film, the photoresist film is exposed by the back sideexposure method of the present invention while gate electrodes 702 to704 are used as masks. In this embodiment, exposure light quantity is 10mW and the distance X between the reflecting plate 700 and the surfaceof the photoresist film is 500 μM. The distance X is set to 500 μmbecause it is the optimal value when the exposure light quantity is 10mW. Used here is the exposure device (shown in FIG. 6) of the presentinvention with which the distance X may be freely adjusted within arange of from 0.1 μm to 1000 μm. The photoresist developed and exposedafter the back side exposure step is removed to form resist masks 709 to712 on the gate electrode and, at the same time, within the gateelectrode area. (FIG. 7B)

The resist masks 709 to 712 obtained by the back side exposure device ofthe present invention are used as masks to dope through the maskinsulating film 708 the crystalline silicon film lying below there withan impurity element for imparting n-type with the use of ion doping (or,ion implanting). In the technical field of semiconductors, group XVelements in the periodic table such as phosphorus (P), arsenic (As),antimony (Sb) are used as impurity elements for imparting n-type, andphosphorus is employed here. The phosphorus (P) concentration of formedlightly doped regions 713 to 718 is desirably within a range of from1×10¹⁷ cm⁻³ to 5×10¹⁸ cm⁻³, here 5×10¹⁷ cm⁻³. In this specification, theconcentration of the impurity element for imparting n-type in the dopedregions 713 to 718 is expressed as (n⁻). (FIG. 7C)

Next, the mask insulating film 708 is etched and removed using theresist masks to form channel protective films 719 to 722. In order toetch the mask insulating film 708 with good selectability with respectto the crystalline silicon film 707 serving as the base, adopted here iswet etching including the use of a fluoric-acid-based solution. Theetching may of course be made by dry etching, for instance, theinsulating film 708 may be etched with CHF₃ gas. Over etching, whichresults in the channel protective regions 719 to 722 formed on the sideinward to the end faces of the resist masks 709 to 712, is also anoption in this step. (FIG. 8A).

Then in the n-channel TFT, the step of forming heavily doped regions toserve as the source region or the drain region is performed. Masks 723to 725 made of resist are formed by a normal exposure method here. Usingthe resist masks, the channel protective film 722 over a capacitancewiring 705 is etched and removed. Subsequently, the crystalline siliconfilm 707 is doped with an impurity element for imparting n-type throughion doping (or, ion implanting) to form heavily doped regions 726 to730. The heavily doped regions 726 to 730 may contain the impurityelement at a concentration of 1×10²⁰ cm⁻³ to 1×10²¹ cm⁻³, here 5×10²⁰cm⁻³. In this specification, that concentration is expressed as (n+).(FIG. 8B).

Next, the step of adding an impurity element for imparting p-type isconducted to form heavily doped regions to be the source region and thedrain region of the channel TFT in the driver circuit. In the technicalfield of semiconductors, group XIII elements in the periodic table suchas boron (B), aluminum (Al), gallium (G) are used as impurity elementsfor imparting p-type, and boron (B) is employed here. In FIG. 8C, a mask731 is formed so as to be positioned within an area on the channelprotective film 719, and all the regions that form the n-channel TFT arecovered with a resist mask 733. Through wet etching using afluoric-acid-based solution, etching treatment is applied so that endsof the channel protective film 719 substantially coincide with ends ofthe mask 731, thereby forming a channel protection insulating film 719 bwith a new shape. Then, heavily doped regions 734 to 736 are formed byion doping (or, ion implanting) using dibolane (B₂H₆). The doped regions734 to 736 are formed by adding the impurity element into the surface ofthe crystalline silicon film. The boron concentration in the regionsranges from 1.5×10²⁰ cm⁻³ to 3×10²¹ cm⁻³ and is set here to 2×10²¹ cm⁻³.In this specification, (p⁺) is used to express the concentration of animpurity element for imparting p-type in the doped regions 734 to 736formed here. In this way, the ends of the heavily doped regions of thep-channel TFT, the ends being in contact with the channel formingregion, are arranged on the side nearer to the channel forming regionthan the ends of the lightly doped regions formed at the previous step,improving the junction state in this portion.

As shown in FIGS. 7B to 8A, the doped regions 735, 736, having beendoped with phosphorus (P) at the previous step, contain a region whereboron (B) and phosphorus (P) are mixed. However, p-type conductivity inthe regions can be secured by setting the concentration of boron addedat this step to a value 1.5 to 3 times the concentration of phosphorus,exercising no influence on characteristic of the TFT. In thisspecification, this region is called a region (A). The doped region 734located on the channel forming region side of the region (A) is a regioncontaining boron (B) only, and is called a region (B) in thisspecification. (FIG. 8C).

After the crystalline silicon film is selectively doped with eachimpurity element, the crystalline silicon film is patterned intoisland-like shapes by etching treatment to form a protection insulatingfilm 737, which later becomes a part of a first interlayer insulatingfilm as shown in FIG. 9A. The protection insulating film 737 may be asilicon nitride film, a silicon oxide film or a silicon nitride oxidefilm, or may be a laminate film using the films in combination. The filmthickness may be 100 to 400 nm.

After that, the heat treatment step is performed to activate theimpurity elements for imparting n-type or p-type which are added inrespective concentrations. This step may be carried out by furnaceannealing, laser annealing, rapid thermal annealing (RTA) or the like.Further heat treatment is performed in an atmosphere containing 3 to100% hydrogen at 300 to 450° C. for 1 to 12 hours, to hydrogenate theactive layer. This step is a step to terminate the dangling bond in theactive layer by the hydrogen thermally excited. Other usablehydrogenation means includes plasma hydrogenation (using hydrogenexcited by plasma). Numerals 747, 752, 757, and 758 denote channelforming regions of thin film transistors, respectively. Regions denotedby numerals 748 to 751 are p+regions, regions denoted by numerals 755,756, 763, 764, and 765 are n+regions, and regions denoted by numerals753, 754, 759, 760, 761, and 762 are n-regions, respectively.

In the case that the crystalline silicon film 707 to be the active layeris formed from an amorphous silicon film through a crystallizationmethod using a catalytic element, remained catalytic element in thecrystalline silicon film 707 is approximately 1×10¹⁷ cm⁻³ to 5×10¹⁹cm⁻³. Completing and operating the TFT in such a state does not giverise to any problem, of course. However, it is preferable to remove theremained catalytic element from at least the channel forming region. Oneof methods for removing the catalytic element is that utilizes getteringeffect. The phosphorus (P) concentration required for gettering is aboutthe same as the doped region (n⁺) formed in FIG. 8B. Through the heattreatment at the activation step conducted here, the catalytic elementis gettered from the channel forming regions of the n-channel TFT andthe p-channel TFT to the heavily doped regions doped with phosphorus(P). As a result, the catalytic element concentration in the channelforming region may be 5×10¹⁷ cm⁻³ or less, and the segregation of thecatalytic element takes place in the above doped regions in 1×10¹⁸ to5×10²⁰ cm⁻³. (FIG. 9A).

After the activation step, an interlayer insulating film 738 having athickness of 500 to 1500 nm is formed on the protection insulating film737. A laminate film consisting of the protection insulating film 737and the interlayer insulating film 738 is regarded as a first interlayerinsulating film. After that, contact holes reaching the source regionsor drain regions of the respective TFTs are formed to form sourcewirings 739 to 741 and drain wirings 742, and 743. Though not shown,each of these electrodes are made of a laminate film having a threelayer structure in which a Ti film with a thickness of 100 nm, analuminum film containing Ti and having a thickness of 300 nm and anotherTi film with a thickness of 150 nm are formed in succession bysputtering.

The protection insulating film 737 and the interlayer insulating film738 may be made of a silicon nitride film, a silicon oxide film, asilicon nitride oxide film, etc. Whichever material they use, theinternal stress of the films can be regarded as compression stress.

Next, a passivation film 744 is formed in a thickness of 50 to 500 nm(typically, 100 to 300 nm) using a silicon nitride film, a silicon oxidefilm or a silicon nitride oxide film. Thereafter, hydrogenationtreatment is performed in this state to obtain a preferable resultregarding to improvement of TFT characteristic. An example of thehydrogenation treatment is a heat treatment in an atmosphere containing3 to 100% hydrogen at 300 to 450° C. for 1 to 12 hours. Plasmahydrogenation may also provide a similar effect. At this point, anopening may be formed in the passivation film 744 at a position where acontact hole for connecting a pixel electrode and the drain wiring lateris to be formed.

A second interlayer insulating film 745 made of an organic resin film isthen formed in a thickness of about 1 μm. Applicable organic resinmaterials include polyimide, acryl, polyamide, polyimideamide and BCB(benzocyclobutene). Here, the film is formed by using polyimide of thetype to be thermally polymerized after applied to the substrate, and isburned at 300° C. Contact holes reaching the drain wiring 743 are formedin the second interlayer insulating film 745 and the passivation film744, forming a pixel electrode 746. The pixel electrode 746 is made of atransparent conductive film when a transmission type liquid crystaldisplay device is intended, and of a metal film when a reflection typeliquid crystal display device is to be fabricated. A transmission typeliquid crystal display device is aimed here, and an indium tin oxide(ITO) film is formed in a thickness of 100 nm by sputtering.

Through the steps above, the pixel TFT in the display region and the TFTof the driver circuit arranged at the periphery of the display regionare formed on the same substrate. In the driver circuit, an n-channelTFT 768 and a p-channel TFT 767 are formed, making it possible to form alogic circuit based on the CMOS circuit. A pixel TFT 769 is an n-channelTFT, and is connected to a capacitor 770 that is comprised of thecapacitance wiring 705, a semiconductor layer 766 and an insulating-filmformed therebetween. (FIG. 9B)

This embodiment is easy to combine with Embodiments 1 through 4, and howto combine them is not restricted.

[Embodiment 6]

This embodiment describes a process of manufacturing an active matrixliquid crystal display device using a substrate on which a pixel TFT anda driver circuit are formed. As shown in FIG. 10, an orientated film 901is formed on the substrate in the state of FIG. 9B shown in Embodiment5. Usually, polyimide resin is often used for an orientated film of aliquid crystal display element. On an opposite side substrate 902, alight-shielding film 903, a transparent conductive film 904 and anorientated film 905 are formed. After forming the orientated film,rubbing treatment is performed so that liquid molecules are orientedwith a certain pre-tilt angle. The substrate on which the pixel TFT andthe driver circuit are formed is bonded with the opposite substrate by aknown cell assembling process through a sealant (not shown) or acolumnar spacer 907. A liquid crystal material 906 is then injectedbetween two substrates to completely seal with an end sealing material(not shown). Known liquid crystal materials may be used. Thus completedis the active matrix liquid crystal display device shown in FIG. 10.

This embodiment is easy to combine with Embodiments 1 through 5, and howto combine them is not restricted.

[Embodiment 7]

This embodiment shows, referring to FIG. 11, an example of a liquidcrystal display device manufactured by the present invention.

In FIG. 11, reference symbol 800 denotes a substrate having aninsulating surface (a plastic substrate on which a silicon oxide film isformed); 801, a display region; 802, a scanning line driver circuit;803, a signal line driver circuit; 830, an opposite substrate; 810, aFPC (flexible printed circuit); and 820, a logic circuit. Usable as thelogic circuit 820 is a circuit that conducts a process IC hasconventionally substituted, such as a D/A converter, a γ correctioncircuit, a signal dividing circuit, etc. An IC chip may be disposed onthe substrate, of course, to conduct signal processing in the IC chip.

Though description is made taking an example of a liquid crystal displaydevice in this embodiment, it is needless to say that the presentinvention is also applicable to an EL (electroluminescence) displaydevice and an EC (electrochromics) display device as long as it is anactive matrix type display device.

Whether it is a transmission type or a reflection type does not matterwhen a liquid crystal display device is manufactured with the use of thepresent invention. The person who carries out the invention may freelydecide which type to choose. Thus, the present invention may be appliedto every active matrix type electrooptical device (semiconductordevice).

Upon fabrication of the semiconductor device shown in this embodiment,any construction of Embodiments 1 through 6 may be employed and to usethe embodiments in free combination is possible.

[Embodiment 8]

The present invention is applicable to conventional IC techniques ingeneral. That is, it may be applied to all the semiconductor circuitsthat are distributed in the market at present. For instance, it may beapplied to microprocessors such as an RISC processor or an ASICprocessor which is integrated on one chip, to a signal processingcircuit a typical example of which is a driver circuit for liquidcrystal (such as a D/A converter, a γ correction circuit and a signaldividing circuit), or to a high frequency circuit for a portable device(such as a cellular phone, a PHS: personal handy phone system, and amobile computer).

A semiconductor circuit such as a microprocessor is provided in variouselectronic equipments to function as a central circuit. Enumerated as atypical electronic equipment are a personal computer, a portable typeinformation terminal device and any other household appliances. Acomputer for controlling a vehicle (automobiles or trains) may also begiven as an example. The present invention is applicable also to such asemiconductor device.

When manufacturing the semiconductor device shown in this embodiment,any construction of Embodiments 1 through 4 may be employed and to usethe embodiments in free combination is possible.

[Embodiment 9]

A TFT formed through carrying out the present invention may be appliedto various electrooptical devices. Namely, the present invention may beembodied in all the electronic equipments that incorporate thoseelectrooptical devices as display devices.

As such an electronic equipment, a video camera, a digital camera, ahead mount display (goggle type display), an wearable display, anavigation system for vehicles, a personal computer, and a portableinformation terminal (a mobile computer, a cellular phone, or anelectronic book) may be enumerated. Examples of those are shown in FIGS.12A to 12F.

FIG. 12A shows a personal computer comprising a main body 2001, an imageinputting unit 2002, a display device 2003, and a keyboard 2004. Thepresent invention is applicable to the image inputting unit 2002, thedisplay device 2003, and other signal control circuits.

FIG. 12B shows a video camera comprising a main body 2101, a displaydevice 2102, a voice input unit 2103, operation switches 2104, a battery2105, and an image receiving unit 2106. The present invention isapplicable to the display device 2102, the voice input unit 2103, andother signal control circuits.

FIG. 12C shows a mobile computer comprising a main body 2201, a cameraunit 2202, an image receiving unit 2203, an operation switch 2204, and adisplay device 2205. The present invention is applicable to the displaydevice 2205 and other signal control circuits.

FIG. 12D shows a goggle type display comprising a main body 2301,display devices 2302 and arm portions 2303. The present invention isapplicable to the display devices 2302 and other signal controlcircuits.

FIG. 12E shows a player that employs a recording medium in whichprograms are recorded (hereinafter referred to as recording medium), andcomprises a main body 2401, a display device 2402, a speaker unit 2403,a recording medium 2404, and an operation switch 2405. Incidentally,this player uses as the recording medium a DVD (digital versatile disc),a CD and the like to serve as a tool for enjoying music or movies, forplaying video games and for connecting to the Internet. The presentinvention is applicable to the display device 2402 and other signalcontrol circuits.

FIG. 12F shows a digital camera comprising a main body 2501, a displaydevice 2502, an eye piece section 2503, operation switches 2504, and animage receiving unit (not shown). The present invention is applicable tothe display device 2502 and other signal control circuits.

As described above, the present invention has so wide application rangethat it is applicable to electronic equipments in any field. Inaddition, the electronic equipment of this embodiment may be realizedwith any construction obtained by combining Embodiments 1 through 8.

[Embodiment 10]

A TFT formed through carrying out the present invention may be appliedto various electrooptical devices. Namely, the present invention may beembodied in all the electronic equipments that incorporate those electrooptical devices as display media.

Enumerated as such an electronic equipment are projectors (rear typeprojector and front type projector). Examples of those are shown inFIGS. 13A to 13D.

FIG. 13A shows a front type projector comprising a display device 2601and a screen 2602. The present invention is applicable to the displaydevice and other signal control circuits.

FIG. 13B shows a rear type projector comprising a main body 2701, adisplay device 2702, a mirror 2703, and a screen 2704. The presentinvention is applicable to the display device and other signal controlcircuits.

FIG. 13C is a diagram showing an example of the structure of the displaydevices 2601, 2702 in FIGS. 13A and 13B. The display device 2601 or 2702comprises a light source optical system 2801, mirrors 2802 and 2804 to2806, dichroic mirrors 2803, a prism 2807, liquid crystal displaydevices 2808, phase difference plates 2809, and a projection opticalsystem 2810. The projection optical system 2810 comprises an opticalsystem including a projection lens. This embodiment shows an example of“three plate type”, but not particularly limited thereto. For instance,the invention may be applied also to “single plate type”. Further, inthe light path indicated by an arrow in FIG. 13C, an optical system suchas an optical lens, a film having a polarization function, a film foradjusting a phase difference and an IR film may be provided ondiscretion of a person who carries out the invention.

FIG. 13D is a diagram showing an example of the structure of the lightsource optical system 2801 in FIG. 13C. In this embodiment, the lightsource optical system 2801 comprises a reflector 2811, light sources2812, lens arrays 2813, 2814, a polarization conversion element 2815,and a condenser lens 2816. The light source optical system shown in FIG.13D is merely an example, and is not particularly limited. For instance,on discretion of a person who carries out the invention, the lightsource optical system may be provided with an optical system such as anoptical lens, a film having a polarization function, a film foradjusting the phase difference and an IR film.

As described above, the present invention has so wide application rangethat it is applicable to electronic equipments in any field. Inaddition, the electronic equipment of this embodiment may be realizedwith any construction obtained by combining Embodiments 1 through 8.

[Embodiment 11]

This example demonstrates a process for producing an active matrix typeEL (electroluminescence) display device according to the invention ofthe present application.

FIG. 15A is a top view showing an EL display device, which was producedaccording to the invention of the present application.

In FIG. 15A, there are shown a substrate 4010, a pixel portion 4011, asource side driving circuit 4012, and a gate side driving circuit 4013,each driving circuit connecting to wirings 4014 to 4016 which reach FPC4017 leading to external equipment.

The pixel portion, preferably together with the driving circuit, isenclosed by a covering material 6000, a sealing material (or housingmaterial) 7000, and an end sealing material (or second sealing material)7001.

FIG. 15B is a sectional view showing the structure of the EL displaydevice in this Example. There is shown a substrate 4010, a base film4021, a TFT 4022 for the driving circuit, and a TFT 4023 for the pixelportion. (The TFT 4022 shown is a CMOS circuit consisting of ann-channel type TFT and a p-channel type TFT. The TFT 4023 shown is theone, which controls current to the EL element.)

Incidentally, the present invention is used in fabrication of the TFT4022 for the driving circuit and the TFT 4023 for the pixel portion.

Upon completion of TFT 4022 (for the driving circuit) and TFT 4023 (forthe pixel portion) according to the invention of the presentapplication, a pixel electrode 4027 is formed on the interlayerinsulating film (planarizing film) 4026 made of a resin. This pixelelectrode is a transparent conductive film, which is electricallyconnected to the drain of TFT 4023 for the pixel portion. When the pixelelectrode comprises a transparent conductive film, it is desirable thatp-channel TFTs are used as pixel TFT. The transparent conductive filmmay be formed from a compound (called ITO) of indium oxide and tin oxideor a compound of indium oxide and zinc oxide. On the pixel electrode4027 is formed an insulating film 4028, in which is formed an openingabove the pixel electrode 4027.

Subsequently, the EL layer 4029 is formed. It may be of single layerstructure or multi layer structure by freely combining known ELmaterials such as a hole injection layer, a hole transport layer, alight emitting layer, an electron transport layer, and an electroninjection layer. Any known technology may be available for suchstructure. The EL material is either a low molecular material or a highmolecular material (polymer). The former may be applied by vapordeposition, and the latter may be applied by a simple method such asspin coating, printing, or ink-jet method.

In this example, the EL layer is formed by vapor deposition through ashadow mask. The resulting EL layer permits each pixel to emit lightdiffering in wavelength (red, green, and blue). This realizes the colordisplay. Alternative systems available include the combination of colorconversion layer (CCM) and color filter and the combination of whitelight emitting layer and color filter. Needless to say, the EL displaydevice may be monochromatic.

On the EL layer is formed a cathode 4030. Prior to this step, it isdesirable to clear moisture and oxygen as much as possible from theinterface between the EL layer 4029 and the cathode 4030. This objectmay be achieved by forming the EL layer 4029 and the cathode 4030subsequently in a vacuum, or by forming the EL layer 4029 in an inertatmosphere and then forming the cathode 4030 in the same atmospherewithout exposing to air. In this Example, the desired film was formed byusing a film forming apparatus of multi chamber system (cluster toolsystem).

The multi layer structure composed of lithium fluoride film and aluminumfilm is used in this Example as the cathode 4030. To be concrete, the ELlayer 4029 is coated by vapor deposition with a lithium fluoride film (1nm thick) and an aluminum film (300 nm thick) sequentially. Needless tosay, the cathode 4030 may be formed from MgAg electrode which is a knowncathode material. Subsequently, the cathode 4030 is connected to awiring 4016 in the region indicated by 4031. The wiring 4016 to supply aprescribed voltage to the cathode 4030 is connected to the FPC 4017through an electrically conductive paste material 4032.

The electrical connection between the cathode 4030 and the wiring 4016in the region 4031 needs contact holes in the interlayer insulating film4026 and the insulating film 4028. These contact holes may be formedwhen the interlayer insulating film 4026 undergoes etching to form thecontact hole for the pixel electrode or when the insulating film 4028undergoes etching to form the opening before the EL layer is formed.When the insulating film 4028 undergoes etching, the interlayerinsulating film 4026 may be etched simultaneously. Contact holes of goodshape may be formed if the interlayer insulating film 4026 and theinsulating film 4028 are made of the same material.

Then, a passivation film 6003, a filling material 6004 and a coveringmaterial 6000 are formed so that these layers cover the EL element.

Furthermore, the sealing material 7000 is formed inside of the coveringmaterial 6000 and the substrate 4010 such as surrounding the EL element,and the end sealing material 7001 is formed outside of the sealingmaterial 7000.

The filling material 6004 is formed to cover the EL element and alsofunctions as an adhesive to adhere to the covering material 6000. As thefilling material 6004, PVC (polyvinyl chloride), an epoxy resin, asilicon resin, PVB (polyvinyl butyral), or EVA (ethylenvinyl acetate)can be utilized. It is preferable to form a desiccant in the fillingmaterial 6004, since a moisture absorption can be maintained.

Also, spacers can be contained in the filling material 6004. It ispreferable to use spherical spacers comprising barium oxide to maintainthe moisture absorption in the spacers.

In the case of that the spaces are contained in the filling material,the passivation film 6003 can relieve the pressure of the spacers. Ofcourse, the other film different from the passivation film, such as anorganic resin, can be used for relieving the pressure of the spacers.

As the covering material 6000, a glass plate, an aluminum plate, astainless plate, a FRP (Fiberglass Reinforced Plastics) plate, a PVF(polyvinyl fluoride) film, a Mylar film, a polyester film or an acrylfilm can be used. In a case that PVB or EVA is employed as the fillingmaterial 6004, it is preferable to use an aluminum foil with a thicknessof some tens of μm sandwiched by a PVF film or a Mylar film.

It is noted that the covering material 6000 should have a lighttransparency with accordance to a light emitting direction (a lightradiation direction) from the EL element.

The wiring 4016 is electrically connected to FPC 4017 through the gapbetween the sealing material 7000 and the end sealing material 7001, andthe substrate 4010. As in the wiring 4016 explained above, other wirings4014 and 4015 are also electrically connected to FPC 4017 under thesealing material 4018.

[Embodiment 12]

In this embodiment, another active matrix type EL display device havinga different structure from the Embodiment 11 is explained, as shown inFIGS. 16A and 16B. The same reference numerals in FIGS. 16A and 16B asin FIGS. 15A and 15B indicate same constitutive elements, so anexplanation is omitted.

FIG. 16A shows a top view of the EL module in this embodiment and FIG.16B shows a sectional view of A-A′ of FIG. 16A.

According to Embodiment 11, the passivation film 6003 is formed to covera surface of the EL element.

The filling material 6004 is formed to cover the EL element and alsofunctions as an adhesive to adhere to the covering material 6000. As thefilling material 6004, PVC (polyvinyl chloride), an epoxy resin, asilicon resin, PVB (polyvinyl butyral), or EVA (ethylenvinyl acetate)can be utilized. It is preferable to form a desiccant in the fillingmaterial 6004, since a moisture absorption can be maintained.

Also, spacers can be contained in the filling material 6004. It ispreferable to use spherical spacers comprising barium oxide to maintainthe moisture absorption in the spacers.

In the case of that the spaces are contained in the filling material,the passivation film 6003 can relieve the pressure of the spacers. Ofcourse, the other film different from the passivation film, such as anorganic resin, can be used for relieving the pressure of the spacers.

As the covering material 6000, a glass plate, an aluminum plate, astainless plate, a FRP (Fiberglass Reinforced Plastics) plate, a PVF(polyvinyl fluoride) film, a Mylar film, a polyester film or an acrylfilm can be used. In a case that PVB or EVA is employed as the fillingmaterial 6004, it is preferable to use an aluminum foil with a thicknessof some tens of μm sandwiched by a PVF film or a Mylar film.

It is noted that the covering material 6000 should have a lighttransparency with accordance to a light emitting direction (a lightradiation direction) from the EL element.

Next, the covering material 6000 is adhered using the filling material3404. Then, the flame material 6001 is attached to cover side portions(exposed faces) of the filling material 6004. The flame material 6001 isadhered by the sealing material (acts as an adhesive) 6002. As thesealing material 6002, a light curable resin is preferable. Also, athermal curable resin can be employed if a heat resistance of the ELlayer is admitted. It is preferable for the sealing material 6002 not topass moisture and oxygen. In addition, it is possible to add a desiccantinside the sealing material 6002.

The wiring 4016 is electrically connected to FPC 4017 through the gapbetween the sealing material 6002 and the substrate 4010. As in thewiring 4016 explained above, other wirings 4014 and 4015 are alsoelectrically connected to FPC 4017 under the sealing material 6002.

[Embodiment 13]

In the an active matrix type EL display device having a structure basedon the Embodiment 11 or 12, the present invention can be used. In thisembodiment, the structure of the pixel region in the panel isillustrated in more detail. FIG. 17 shows the cross section of the pixelregion; FIG. 18A shows the top view thereof; and FIG. 18B shows thecircuit structure for the pixel region. In FIG. 17, FIG. 18A and FIG.18B, the same reference numerals are referred to for the same portions,as being common thereto.

In FIG. 17, the switching TFT 3502 formed on the substrate 3501 is NTFTfabricated using the invention (cf. Embodiments 1 to 5). In thisEmbodiment, it has a double gate structure, but its structure andfabrication process do not so much differ from the structures and thefabrication processes illustrated hereinabove, and their description isomitted herein. However, the double gate structure of the switching TFT3502 has substantially two TFTs as connected in series, and thereforehas the advantage of reducing the off current to pass therethrough. Inthis Embodiment, the switching TFT 3502 has such a double gatestructure, but is not limitative. It may have a single gate structure ora triple gate structure, or even any other multi gate structure havingmore than three gates. As the case may be, the switching TFT 3502 may bePTFT of the invention.

The current control TFT 3503 is NTFT of the invention. The drain wire 35in the switching TFT 3502 is electrically connected with the gateelectrode 37 of the current control TFT, via the wire 36 therebetween.The wire indicated by 38 is a gate wire for electrically connecting thegate electrodes 39 a and 39 b in the switching TFT 3502.

It is very important that the current control TFT 3503 has the structurefabricated by using the invention. The current control TFT is a unit forcontrolling the quantity of current that passes through the EL device.Therefore, a large quantity of current passes through it, and the unit,current control TFT has a high risk of thermal degradation anddegradation with hot carriers. To this unit, therefore, the LDDstructure of the invention is extremely favorable.

In this Embodiment, the current control TFT 3503 is illustrated to havea single gate structure, but it may have a multi gate structure withplural TFTs connected in series. In addition, plural TFTs may beconnected in parallel so that the channel forming region issubstantially divided into plural sections. In the structure of thattype, heat radiation can be effected efficiently. The structure isadvantageous for protecting the device with it from thermaldeterioration.

As in FIG. 18A, the wire to be the gate electrode 37 in the currentcontrol TFT 3503 overlaps with the drain wire 40 therein in the regionindicated by 3504, via an insulating film therebetween. In this state,the region indicated by 3504 forms a capacitor. The capacitor 3504functions to retain the voltage applied to the gate electrode in thecurrent control TFT 3503. The drain wire 40 is connected with thecurrent supply line (power line) 3506, from which a constant voltage isall the time applied to the drain wire 40.

On the switching TFT 3502 and the current control TFT 3503, a firstpassivation film 41 is formed. On the film 41, formed is a planarizingfilm 42 of an insulating resin. It is extremely important that thedifference in level of the layered portions in TFT is removed throughplanarization with the planarizing film 42. This is because the EL layerto be formed on the previously formed layers in the later step isextremely thin, and if there exist a difference in level of thepreviously formed layers, the EL device will be often troubled by lightemission failure. Accordingly, it is desirable to previously planarizeas much as possible the previously formed layers before the formation ofthe pixel electrode thereon so that the EL layer could be formed on theplanarized surface.

The reference numeral 43 indicates a pixel electrode (a cathode in theEL device) of an conductive film with high reflectivity. In this case,it is desirable that an n-channel TFT is used as the current controlTFT. The pixel electrode 43 is electrically connected with the drainregion in the current control TFT 3503. It is preferable that the pixelelectrode 43 is of a low resistance conductive film of an aluminumalloy, a copper alloy or a silver alloy, or of a laminate of thosefilms. Needless to say, the pixel electrode 43 may have a laminatestructure with any other conductive films.

In the recess (this corresponds to the pixel) formed between the banks44 a and 44 b of an insulating film (preferably of a resin), the lightemitting layer 45 is formed. In the illustrated structure, only onepixel is shown, but plural light emitting layers could be separatelyformed in different pixels, corresponding to different colors of R(red), G (green) and B (blue). The organic EL material for the lightemitting layer may be any π-conjugated polymer material. Typical polymermaterials usable herein include polyparaphenylenevinylene (PVV)materials, polyvinylcarbazole (PVK) materials, polyfluorene materials,etc.

Various types of PVV type organic EL materials are known, such as thosedisclosed in H. Shenk, H. Becker, O. Gelsen, E. Klunge, W. Kreuder, andH. Spreitzer; Polymers for Light Emitting Diodes, Euro DisplayProceedings, 1999, pp. 33-37 and in Japanese Patent Laid-Open No.10-92576 (1998). Any of such known materials are usable herein.

Concretely, cyanopolyphenylenevinylenes may be used for red emittinglayers; polyphenylenevinylenes may be for green emitting layers; andpolyphenylenevinylenes or polyalkylphenylenes may be for blue emittinglayers. The thickness of the film for the light emitting layers may fallbetween 30 and 150 nm (preferably between 40 and 100 nm).

These compounds mentioned above are referred to merely for examples oforganic EL materials employable herein and are not limitative at all.The light emitting layer may be combined with a charge transportationlayer or a charge injection layer in any desired manner to form theintended EL layer (this is for light emission and for carrier transferfor light emission).

Specifically, this embodiments to demonstrate an embodiment of usingpolymer materials to form light emitting layers, which, however, is notlimitative. Low molecular organic EL materials may also be used forlight emitting layers. For charge transportation layers and chargeinjection layers, further employable are inorganic materials such assilicon carbide, etc. Various organic EL materials 1′ and inorganicmaterials for those layers are known, any of which are usable herein.

In this Embodiment, a hole injection layer 46 of PEDOT (polythiophene)or PAni (polyaniline) is formed on the light emitting layer 45 to give alaminate structure for the EL layer. On the hole injection layer 46,formed is an anode 47 of a transparent conductive film. In thisEmbodiment, the light having been emitted by the light emitting layer 45radiates therefrom in the direction toward the top surface (that is, inthe upward direction of TFT). Therefore, in this, the anode musttransmit light. For the transparent conductive film for the anode,usable are compounds of indium oxide and tin oxide, and compounds ofindium oxide and zinc oxide. However, since the anode is formed afterthe light emitting layer and the hole injection layer having poor heatresistance have been formed, it is preferable that the transparentconductive film for the anode is of a material capable of being formedinto a film at as low as possible temperatures.

When the anode 47 is formed, the EL device 3505 is finished. The ELdevice 3505 thus fabricated herein indicates a capacitor comprising thepixel electrode (cathode) 43, the light emitting layer 45, the holeinjection layer 4 and the anode 47. As in FIG. 18A, the region of thepixel electrode 43 is nearly the same as the area of the pixel.Therefore, in this, the entire pixel functions as the EL device.Accordingly, the light utility efficiency of the EL device fabricatedherein is high, and the device can display bright images.

In this Embodiment, a second passivation film 48 is formed on the anode47. For the second passivation film 48, preferably used is a siliconnitride film or a silicon nitride oxide film. The object of the film 48is to insulate the EL device from the outward environment. The film 48has the function of preventing the organic EL material from beingdegraded through oxidation and has the function of preventing it fromdegassing. With the second passivation film 48 of that type, thereliability of the EL display device is improved.

As described hereinabove, the EL display panel of the inventionfabricated in this Embodiment has a pixel portion for the pixel havingthe constitution as in FIG. 17, and has the switching TFT through whichthe off current to pass is very small to a satisfactory degree, and thecurrent control TFT resistant to hot carrier injection. Accordingly, theEL display panel fabricated herein has high reliability and can displaygood images.

The constitution of this Embodiment can be combined with anyconstitution of Embodiments 1 to 5 in any desired manner. Incorporatingthe EL display panel of this Embodiment into the electronic appliance ofEmbodiment 14 as its display portion is advantageous.

[Embodiment 14]

This Embodiment is to demonstrate a modification of the EL display panelof Embodiment 13, in which the EL device 3505 in the pixel portion has areversed structure. For this Embodiment, referred to is FIG. 19. Theconstitution of the EL display panel of this Embodiment differs fromthat illustrated in FIG. 18A only in the EL device portion and thecurrent control TFT portion. Therefore, the description of the otherportions except those different portions is omitted herein.

In FIG. 19, the current control TFT 3701 may be PTFT fabricated by usingthe invention. For the process of forming it, referred to is that ofEmbodiment 1 to 5.

In this Embodiment, the pixel electrode (anode) 50 is of a transparentconductive film. Concretely, used is an conductive film of a compound ofindium oxide and zinc oxide. Needless to say, also usable is anconductive film of a compound of indium oxide and tin oxide.

After the banks 51 a and 51 b of an insulating film have been formed, alight emitting layer 52 of polyvinylcarbazole is formed between them ina solution coating method. On the light emitting layer 52, formed are anelectron injection layer 53 of acetylacetonatopotassium, and a cathode54 of an aluminum alloy. In this case, the cathode 54 serves also as apassivation film. Thus is fabricated the EL device 3701.

In this Embodiment, the light having been emitted by the light emittinglayer radiates in the direction toward the substrate with TFT formedthereon, as in the direction of the arrow illustrated.

The constitution of this Embodiment can be combined with anyconstitution of Embodiments 1 to 5 in any desired manner. Incorporatingthe EL display panel of this Embodiment into the electronic appliance ofEmbodiment 14 as its display portion is advantageous.

[Embodiment 15]

This Embodiment is to demonstrate modifications of the pixel with thecircuit structure of FIG. 18B. The modifications are as in FIG. 20A toFIG. 20C. In this Embodiment illustrated in those FIG. 20A to FIG. 20C,3801 indicates the source wire for the switching TFT 3802; 3803indicates the gate wire for the switching TFT 3802; 3804 indicates acurrent control TFT; 3805 indicates a capacitor; 3806 and 3808 indicatecurrent supply lines; and 3807 indicates an EL device.

In the embodiment of FIG. 20A, the current supply line 3806 is common tothe two pixels. Specifically, this embodiment is characterized in thattwo pixels are lineal symmetrically formed with the current supply line3806 being the center between them. Since the number of current supplylines can be reduced therein, this embodiment is advantageous in thatthe pixel portion can be much finer and thinner.

In the embodiment of FIG. 20B, the current supply line 3808 is formed inparallel to the gate wire 3803. Specifically, in this, the currentsupply line 3808 is so constructed that it does not overlap with thegate wire 3803, but is not limitative. Being different from theillustrated case, the two may overlap with each other via an insulatingfilm therebetween so far as they are of different layers. Since thecurrent supply line 3808 and the gate wire 3803 may enjoy the commonexclusive area therein, this embodiment is advantageous in that thepixel pattern can be much finer and thinner.

The structure of the embodiment of FIG. 20C is characterized in that thecurrent supply line 3808 is formed in parallel to the gate wires 3803,like in FIG. 20B, and that two pixels are lineal symmetrically formedwith the current supply line 3808 being the center between them. Inthis, it is also effective to provide the current supply line 3808 insuch a manner that it overlaps with any one of the gate wires 3803.Since the number of current supply lines can be reduced therein, thisembodiment is advantageous in that the pixel pattern can be much finerand thinner.

The constitution of this Embodiment can be combined with anyconstitution of Embodiment 1 to 5, 11 and 12 in any desired manner.Incorporating the EL display panel having the pixel structure of thisEmbodiment into the electronic appliance of Embodiment 14 as its displayportion is advantageous.

[Embodiment 16]

The embodiment of Embodiment 13 illustrated in FIG. 18A and FIG. 18B isprovided with the capacitor 3504 which acts to retain the voltageapplied to the gate in the current control TFT 3503. In the embodiment,however, the capacitor 3504 may be omitted.

In the embodiment of Embodiment 13, the current control TFT 3503 is NTFTfabricated by using the invention, as shown in Embodiments 1 to 5.Therefore, in the Embodiment 13, the LDD region is so formed that itoverlaps with the gate electrode via the gate insulating filmtherebetween. In the overlapped region, formed is a parasiticcapacitance generally referred to as a gate capacitance. The embodimentof this Embodiment is characterized in that the parasitic capacitance ispositively utilized in place of the capacitor 3504.

The parasitic capacitance in question varies, depending on the area inwhich the gate electrode overlaps with the LDD region, and is thereforedetermined according to the length of the LDD region in the overlappedarea.

Also in the embodiments of Embodiment 15 illustrated in FIG. 20A, FIG.20B and FIG. 20C, the capacitor 3805 can be omitted.

The constitution of this Embodiment can be combined with anyconstitution of Embodiment 1 to 5, 11 to 15 in any desired manner.Incorporating the EL display panel having the pixel structure of thisEmbodiment into the electronic appliance of Embodiment 14 as its displayportion in advantageous.

Utilization of the present invention makes it possible to form a patternin a self alignment manner without using an exposure device thatinvolves the use of a photo mask. The fluctuation caused uponpositioning of the photo masks is thus does not takes place, reducingfluctuation in characteristic in the TFT. Particularly, when the patternformation method of the present invention, that is a self alignmentmethod, is employed for a manufacturing method of a bottom gate typeTFT, an LDD region and offset region of desired size may be formed on agate wiring.

In addition, utilization of the present invention can cause light toround and reach a given spot in a short period of time. Therefore, apattern may be formed on the inside above the wiring, even if the wiringis minute.

1. A method of manufacturing a semiconductor device comprising steps of:forming a gate electrode over a front side of a substrate; forming asemiconductor film over said gate electrode with a gate insulating filminterposed therebetween; forming a photosensitive film over saidsemiconductor film; providing a reflecting plate apart from a surface ofsaid photosensitive film by a predetermined distance; providing a lightsource for emitting a light adjacent to a back side of said substrate;and exposing said photosensitive film by irradiating from the back sideof said substrate with said light emitted from said light source usingsaid gate electrode as a mask and said reflecting plate for reflectingsaid light having penetrated through said photosensitive film therebysaid photosensitive film is irradiated from said front side of saidsubstrate with the light.
 2. The method according to claim 1, whereinsaid semiconductor device is one selected from the group consisting of avideo camera, a digital camera, a head mount display, a goggle typedisplay, an wearable display, a navigation system for vehicles, apersonal computer, a portable information terminal, a mobile computer, acellular phone, and an electronic book.
 3. A method of manufacturing asemiconductor device, comprising steps of: forming a pattern comprisinga light-shielding film over a front side of a light transmissivesubstrate; forming a photosensitive film over said pattern; providing alight source for emitting a light adjacent to a back side of said lighttransmissive substrate; reflecting or scattering by a reflecting meansthe light from the light source which has penetrated through saidphotosensitive film, and thereby irradiating said photosensitive filmwith the light from the front side of said light transmissive substrateto expose the photosensitive film; and developing the photosensitivefilm.
 4. The method according to claim 3, wherein said semiconductordevice is one selected from the group consisting of a video camera, adigital camera, a head mount display, a goggle type display, an wearabledisplay, a navigation system for vehicles, a personal computer, aportable information terminal, a mobile computer, a cellular phone, andan electronic book.
 5. A method of manufacturing a semiconductor device,comprising steps of: forming a pattern comprising a light-shielding filmover a front side of a light transmissive substrate; forming aphotosensitive film over said pattern; providing a light source foremitting a light adjacent to a back side of said light transmissivesubstrate; exposing said photosensitive film by irradiating from theback side of said light transmissive substrate with the light emittedfrom the light source, while using said pattern as a mask; reflecting orscattering by a reflecting means the light from the light source whichhas penetrated through said photosensitive film, so that saidphotosensitive film is irradiated from the front side of said lighttransmissive substrate with the light and is exposed; and developing thephotosensitive film.
 6. The method according to claim 5, wherein saidsemiconductor device is one selected from the group consisting of avideo camera, a digital camera, a head mount display, a goggle typedisplay, an wearable display, a navigation system for vehicles, apersonal computer, a portable information terminal, a mobile computer, acellular phone, and an electronic book.
 7. A method of manufacturing asemiconductor device, comprising steps of: forming a gate wiring over afront side of a light transmissive substrate; forming a gate insulatingfilm on said gate wiring; forming a semiconductor film on said gateinsulating film; forming a photosensitive film over said semiconductorfilm; providing a light source for emitting a light adjacent to a backside of said light transmissive substrate: exposing said photosensitivefilm by irradiating from the back side of said light transmissivesubstrate with the light emitted from a light source while using saidgate wiring as a first mask; and reflecting or scattering by areflecting means the light from the light source, which has penetratedthrough said photosensitive film, so that said photosensitive film isirradiated from the front side of said light transmissive substrate withthe light and is exposed; removing an exposed part of the photosensitivefilm to form a pattern comprising the photosensitive film; and dopingsaid semiconductor film with dopants for imparting conductivity usingsaid pattern comprising the photosensitive film as a second mask.
 8. Themethod according to claim 7, wherein said semiconductor device is oneselected from the group consisting of a video camera, a digital camera,a head mount display, a goggle type display, an wearable display, anavigation system for vehicles, a personal computer, a portableinformation terminal, a mobile computer, a cellular phone, and anelectronic book.
 9. A method of manufacturing a semiconductor device,comprising steps of: forming a gate wiring over a front side of a lighttransmissive substrate; forming a gate insulating film on said gatewiring; forming a semiconductor film on said gate insulating film;forming an insulating film on said semiconductor film; forming aphotosensitive film on said insulating film; providing a light sourcefor emitting a light adjacent to a back side of said light transmissivesubstrate; exposing said photosensitive film by irradiating from theback side of said light transmissive substrate with the light emittedfrom the light source while using said gate wiring as a first mask;reflecting or scattering by a reflecting means the light from the lightsource which has penetrated through said photosensitive film, so thatsaid photosensitive film is irradiated from the front side of said lighttransmissive substrate with the light and is exposed; removing anexposed part of the photosensitive film to form a first patterncomprising the photosensitive film; selectively removing said insulatingfilm using said first pattern as a second mask to form a second patterncomprising said insulating film; removing said first pattern comprisingthe photosensitive film; and doping said semiconductor film with dopantsfor imparting a conductivity using said second pattern comprising theinsulating film as a third mask.
 10. The method according to claim 9,wherein said first pattern is small in size as compared to said gatewiring.
 11. The method according to claim 9, wherein the shape of saidfirst pattern comprising the photosensitive film corresponds to areduced shape of said gate wiring.
 12. The method according to claim 9,wherein said reflecting means is a reflecting plate on which a filmcomprising a reflective material is formed.
 13. The method according toclaim 9, wherein said insulating film contains at least one selectedfrom the group consisting of a silicon nitride film, a silicon oxidenitride film, a silicon oxide film and an organic resin film.
 14. Themethod according to claim 9, wherein said semiconductor device is oneselected from the group consisting of a video camera, a digital camera,a head mount display, a goggle type display, an wearable display, anavigation system for vehicles, a personal computer, a portableinformation terminal, a mobile computer, a cellular phone, and anelectronic book.
 15. A method of manufacturing a semiconductor device,comprising steps of: forming a gate wiring over a front side of a lighttransmissive substrate; forming a gate insulating film on said gatewiring; forming a semiconductor film on said gate insulating film;forming an insulating film on said semiconductor film; forming aphotosensitive film on said insulating film; providing a light sourcefor emitting a light adjacent to a back side of said light transmissivesubstrate; exposing said photosensitive film by irradiating from theback side of said light transmissive substrate with the light emittedfrom the light source while using said gate wiring as a first mask;reflecting or scattering by a reflecting means the light from the lightsource which has penetrated through said photosensitive film, so thatsaid photosensitive film is irradiated from the front side of said lighttransmissive substrate with the light and is exposed; removing anexposed part of the photosensitive film to form a first patterncomprising the photosensitive film; selectively removing said insulatingfilm using said first pattern as a second mask to form a second patterncomprising said insulating film; removing said first pattern comprisingthe photosensitive film; and doping said semiconductor film with dopantsfor imparting a conductivity using said second pattern comprising theinsulating film as a third mask.
 16. The method according to claim 15,wherein said first pattern is small in size as compared to said gatewiring.
 17. The method according to claim 15, wherein the shape of saidfirst pattern comprising the photosensitive film corresponds to areduced shape of said gate wiring.
 18. The method according to claim 15,wherein said reflecting means is a reflecting plate on which a filmcomprising a reflective material is formed.
 19. The method according toclaim 15, wherein said insulating film contains at least one selectedfrom the group consisting of a silicon nitride film, a silicon oxidenitride film, a silicon oxide film and an organic resin film.
 20. Themethod according to claim 15, wherein said semiconductor device is oneselected from the group consisting of a video camera, a digital camera,a head mount display, a goggle type display, an wearable display, anavigation system for vehicles, a personal computer, a portableinformation terminal, a mobile computer, a cellular phone, and anelectronic book.
 21. A method of manufacturing a semiconductor device,comprising steps of: forming a gate wiring over a front side of a lighttransmissive substrate; forming a gate insulating film on said gatewiring; forming a semiconductor film on said gate insulating film;forming an insulating film on said semiconductor film; forming a firstphotosensitive film on said insulating film; providing a light sourcefor emitting lights adjacent to a back side of said light transmissivesubstrate; exposing said first photosensitive film by irradiating fromthe back side of said light transmissive substrate with a first lightemitted from the light source while using said gate wiring as a firstmask; reflecting or scattering by a first reflecting means the firstlight from the light source which has penetrated through said firstphotosensitive film, so that said first photosensitive film isirradiated with the first light from the front side of said lighttransmissive substrate and is exposed; removing an exposed part thefirst photosensitive film to form a first pattern comprising the firstphotosensitive film; selectively removing said insulating film whileusing said first pattern as a second mask to form a second patterncomprising the insulating film; removing said first pattern comprisingsaid first photosensitive film; forming a second photosensitive film;exposing said second photosensitive film by irradiating from the backside of said light transmissive substrate with a second light emittedfrom the light source while using said gate wiring as a third mask;reflecting or scattering by a second reflecting means the second lightfrom the light source which has penetrated through said secondphotosensitive film, so that said second photosensitive film isirradiated with the second light from the front side of said lighttransmissive substrate and is exposed; removing an exposed part of thesecond photosensitive film to form a third pattern comprising the secondphotosensitive film; doping with a high concentration of dopants forimparting conductivity while using said second pattern and said thirdpattern as masks; removing said third pattern; and doping a lowconcentration of dopants for imparting conductivity while using saidsecond pattern as a fourth mask.
 22. The method according to claim 21,wherein said third pattern is small in size as compared to said gatewiring, and is larger than said first pattern.
 23. The method accordingto claim 21, wherein the shape of said first pattern comprising thefirst photosensitive film corresponds to a reduced shape of said gatewiring.
 24. The method according to claim 21, wherein each of said firstreflecting means and said second reflecting means is a reflecting plateon which a film comprising a reflective material is formed.
 25. Themethod according to claim 21, wherein said insulating film contains atleast one selected from the group consisting of a silicon nitride film,a silicon oxide nitride film, a silicon oxide film and an organic resinfilm.
 26. The method according to claim 2, wherein said semiconductordevice is one selected from the group consisting of a video camera, adigital camera, a head mount display, a goggle type display, an wearabledisplay, a navigation system for vehicles, a personal computer, aportable information terminal, a mobile computer, a cellular phone, andan electronic book.
 27. A method of manufacturing a semiconductordevice, comprising steps of: forming a pattern comprising alight-shielding film over a front side of a light transmissivesubstrate; forming a photosensitive film over said pattern; providing areflecting means over the front side of said light transmissivesubstrate; providing a light source for emitting a light adjacent to theback side of said light transmissive substrate; and exposing saidphotosensitive film by irradiating from the back side of said lighttransmissive substrate with said light emitted from said light sourcewhile using said pattern as a mask, wherein said reflecting meansreflects said light passing through said photosensitive film, therebysaid photosensitive film is irradiated from the front side of said lighttransmissive substrate with the light and is exposed.
 28. A method ofmanufacturing a semiconductor device, comprising steps of: forming apattern comprising a light-shielding film over a front side of a lighttransmissive substrate; forming a photosensitive film over said pattern;providing a light source for emitting a light adjacent to the back sideof said light transmissive substrate; exposing said photosensitive filmby irradiating from the back side of said light transmissive substratewith the light emitted from the light source while using said pattern asa mask; and reflecting or scattering by a reflecting means the lightfrom the light source which has penetrated through said photosensitivefilm, so that said photosensitive film is irradiated from the front sideof said light transmissive substrate with the light and is exposed. 29.The method according to claim 28, wherein a shape of the photosensitivefilm formed over said pattern corresponds to a reduced shape of saidpattern comprising the light-shielding film.